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本文介绍了一种通过SU-8/PMMA双层胶制备硅点阵结构的方法,首先用PDMS模板压印带SU-8/PMMA双层胶的硅片,用ICP刻蚀后,得到具有内切结构的光刻胶掩膜,镀金属膜并去胶后,进行金属辅助化学湿法刻蚀,在硅片表面获得点阵结构。实验结果表明,通过该方法获得的硅点阵结构的反射率较平面硅有显著降低;该方法成本较低,过程简单,由于采用软压印和低压压印的方式,可实现硅点阵结构的大面积制备。
In this paper, a method of fabricating a silicon lattice structure by using SU-8 / PMMA double-layer adhesive is described. Firstly, a silicon wafer with SU-8 / PMMA double-layer adhesive is imprinted with a PDMS template, Cut the structure of the photoresist mask, metallized film and to glue, the metal assisted chemical wet etching, the lattice surface of the lattice structure obtained. Experimental results show that the reflectivity of the silicon lattice structure obtained by the method is significantly lower than that of the planar silicon. The method has the advantages of low cost and simple process. Due to the adoption of the soft embossing and the low-pressure embossing, the silicon lattice structure Large area preparation.