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The optical transmission(200―2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/□), ITO(12 Ω/□), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 μm based on Er(DBM)3Phen with ITO(100 Ω/□), ITO(12 Ω/□) and PANI as anodes, respectively, were fabricated. The device structure was anode/4’’-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/N,N′-di-1-naphthyl-N,N′-diphenylbenzidine(NPB)/Er(DBM)3Phen/tris-(8-hydroxyquinoline) aluminum(Alq3)/Al. The results suggest that the performance of NIR-OLEDs with ITO(100 Ω/□), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Ω/□) and PANI as anodes, respectively. The high NIR transmittance of ITO(100 Ω/□) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Ω/□) are another reasons.
The optical transmission (200-2000 nm), sheet resistance and work functions of indium-tin oxide (ITO) 100 Ω / □, ITO 12 Ω / □, zinc-oxide ZnO, Near-infrared organic light-emitting diodes (NIR-OLEDs) emitting around 1.54 μm based on Er (DBM) 3 Phen with ITO (100 Ω / □), ITO The device structure was anode / 4 "- tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine (m- MTDATA) / N, 1-naphthyl-N, N’-diphenylbenzidine (NPB) / Er (DBM) 3Phen / tris- (8-hydroxyquinoline) aluminum (Alq3) / Al. The results suggest that the performance of NIR-OLEDs with ITO (100 Ω / □), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO (12 Ω / □) and PANI as anodes, respectively. The high NIR transmittance of ITO (100 Ω / □) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO (100 Ω / □) are another reasons.