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利用溶剂热法合成了层状硫代锡(Ⅲ)酸镉(Ⅱ)化合物K2CdSnS4。单晶X-射线衍射分析结果表明,化合物属单斜晶系,C2/c空间群,a=1.102 1(5)nm,b=1.103 0(5)nm,c=1.515 1(10)nm,α=90°,β=100.416(12)°,γ=90°,V=1.811 4(17)nm3,Z=8,Dc=3.209 g·cm-3,Mr=437.60,μ=6.853 mm-1,F(000)=1 600,λ=0.071 073 nm,R=0.104 2,wR=0.200 8。该化合物由类金刚烷[Cd2Sn2S10]8-结构单元互相连接形成层状结构。紫外-可见漫反射光谱研究表明,化合物为半导体,带隙为2.2 eV。
The layered cadmium (Ⅱ) compound K2CdSnS4 was synthesized by solvothermal method. The results of single crystal X-ray diffraction showed that the compound belongs to the monoclinic space group C2 = c, a = 1.102 1 (5) nm, b = 1.103 0 α = 90 °, β = 100.416 (12) °, γ = 90 °, V = 1.811 4 (17) nm3, Z = 8, Dc = 3.209 g · cm -3, Mr = 437.60, μ = 6.853 mm -1 , F (000) = 1 600, λ = 0.071 073 nm, R = 0.104 2, wR = 0.200 8. The compound is connected to each other by an adamantane [Cd2Sn2S10] 8- structural unit to form a layered structure. UV-Vis diffuse reflectance spectroscopy studies show that the compound is a semiconductor with a bandgap of 2.2 eV.