应变效应对半导体激光器输出波长的影响

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假设应变效应仅出现在势阱底部,并可用方形势垒代替。在量子力学的框架下,对双阱结构的量子阱进行了讨论,并对输出波长的应变效应进行了分析。结果表明,在应变作用下,量子阱出现了能级漂移和能级分裂。正是这种效应为人们研制高性能量子阱光学器件提供了更大的设计空间。 It is assumed that the strain effect appears only at the bottom of the potential well and can be replaced by a square barrier. Under the framework of quantum mechanics, the quantum well of double-well structure is discussed, and the strain effect of output wavelength is analyzed. The results show that energy level drift and energy level splitting appear in the quantum well under strain. It is this effect that provides a greater design space for people to develop high performance quantum well optics.
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