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用改进的恒压微探针方法 ,对 6 4× 6 4元 In Sb凝视红外焦平面器件光伏探测器列阵芯片的性能进行了抽样检测和均匀性评价 .测得典型 6 4× 6 4元 In Sb芯片的探测器平均零偏阻抗为 42 MΩ (90 K) ,非均匀性为 2 0 % ;平均 10 0 0 K黑体响应率为 2 .8A/W,非均匀性为 6 .3% ;电学串音率 <2 % .讨论了性能异常芯片上存在的局部电学串音现象
An improved constant voltage micro-probe method was used to test the sampling performance and uniformity of a 6 × 4 4-element In Sb gaze infrared planar photodetector array chip, and a typical 6 4 × 6 4 element The average bias impedance of the detector with In Sb chip is 42 MΩ (90 K) and the non-uniformity is 20%. The average blackbody response rate of 100 K is 2.8 A / W and the non-uniformity is 6.3%. Electrical crosstalk rate <2%. Discuss the phenomenon of local electrical crosstalk on abnormal performance chips