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一、问题的提出当硅体内击穿电压满足了额定容量要求之后,与硅表面相连的结末端将成为突出的薄弱环结.为减少表面效应、降低表面电场、使大面积雪崩击穿发生在体内,目前超高压晶体管(BV_(cbo)≥1500V)普遍采用台式正斜角技术.正斜角结构虽然满足了展宽表面电场的需要,但也给工艺过程带来一个严重的问题,即如何克服工艺过程中正斜角边缘严重的机械破损现象.
First, the problem raised When the breakdown voltage in silicon body to meet the rated capacity requirements, the end of the junction with the silicon surface will become prominent weak ring junction to reduce the surface effect, reducing the surface electric field, so that a large area avalanche breakdown occurred In the present, the desktop positive bevel angle technology is commonly used in BV (cbo) ≥1500 V. Although the positive bevel angle structure meets the need of widening the surface electric field, it poses a serious problem to the process, that is how to overcome The process is serious bevel edge mechanical damage phenomenon.