Electronics devices based on graphene and carbon nanotubes (CNTs) have attracted significant attentions for potential radiofrequency (RF) applications [1-4].It is shown that intrinsic current-gain and power-gain cutoff frequencies above 1 THz should be possible, but experimental demonstration using field-effect transistors (FETs) based on individual CNTs suffered from excessive parasitic effects and impedance mismatch problems.In order to overcome these limitations, great efforts have been concentrated on FETs made from aligned arrays of CNTs.