【摘 要】
：
Strain has valuable effects on the formation of the growth and the photo electronic properties of Ge/Si quantum dots(QDs),and it is important to understand the distribution of strain and the other pro
【机 构】
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Yunnan Key Laboratory for the Micro/Nano Materials & Technology,Yunnan University,Kunming,650091,PR
【出 处】
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2015中国国际功能材料科技与产业高层论坛
论文部分内容阅读
Strain has valuable effects on the formation of the growth and the photo electronic properties of Ge/Si quantum dots(QDs),and it is important to understand the distribution of strain and the other properties of Ge/Si QDs theoretically.
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