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以H2O2和V2O5为前驱物,利用H2O2和V2O5特殊化学作用制备V溶胶,而后在云母基底上成膜,经不同热处理温度(450～570℃)退火还原得到VO2薄膜。利用SEM、XRD、XPS分析薄膜表面形貌和微观结构,利用FTIR检测薄膜在不同温度下红外透过率,确定薄膜的相变温度及滞后温宽。实验表明,双氧水法制备的VO2薄膜红外屏蔽效率高,且高温透过率仅为2%左右。热处理温度对VO2薄膜表面形貌、微观结构及相变特性均产生影响。510℃热处理退火可得到生长致密、粒径分布均匀、相变温度低、滞后温宽较小的VO2薄膜。
VO2 sol was prepared by H2O2 and V2O5 special chemical reaction with H2O2 and V2O5 as precursors, and then formed on the mica substrate. The VO2 thin films were annealed at different heat treatment temperatures (450 ~ 570 ℃). The surface morphology and microstructure of the film were analyzed by SEM, XRD and XPS. The infrared transmittance of the film was measured by FTIR at different temperatures to determine the phase transition temperature and the hysteresis width of the film. Experiments show that the hydrogen peroxide prepared by the hydrogen peroxide method VO2 film infrared shielding efficiency, and the high temperature transmittance of only about 2%. The effect of heat treatment temperature on the morphology, microstructure and phase transition of VO2 thin films. Annealing at 510 ℃ could result in a dense VO2 thin film with uniform growth, uniform particle size distribution, low phase transformation temperature and small hysteresis width.