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5. Origin and control of gap states:A striking mobility improvement of C60 OFET

Origin and control of gap states:A striking mobility improvement of C60 OFET

来源 :International Conference on Molecular Electronic Materials a | 被引量 : 0次 | 上传用户：jbajba321

【摘 要】

：

Charge carrier transport,which is central to the performance of various organic-based devices,is strongly affected by localized electronic gap states originating from various polarons,structural defec

【作 者】

：

Jin-Peng Yang Fabio Bussolotti Alexander Hinderhofer Satoshi Kera Nobuo Ueno 

【机 构】

：

Graduate School of Advanced Integration Science,Chiba University,Inage-ku,Chiba 263-8522,Japan

【出 处】

：

International Conference on Molecular Electronic Materials a

【发表日期】

：

2015年5期

【关键词】

：

gap states energy level alignment mobility pentacene C60 

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Charge carrier transport,which is central to the performance of various organic-based devices,is strongly affected by localized electronic gap states originating from various polarons,structural defects,impurities and/or chemical interactions with the gaseous environment.

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