Graphene doped AZO thin films were prepared by sol-gel method with using metal salts and reduced grapheneoxide(rgo) as raw materials and using ethylene glycol dimethyl ether as solvent,though spin coating to form wet film,last thin film was obtained after annealing at 500 ℃.Respectively by means of X-ray diffraction (XRD), scanningelectron microscopy (SEM),transmission electron microscope(TEM),X-ray photoelectron spectroscopy (XPS) analysis, ultraviolet visible absorption spectroscopy (UV-Vis) and four-point prober tester for thin film materials of morphology, structure characterization.The experimental results show that, Al was doped into the crystal of ZnO,nanoparticlesZnO are uniformly distributed on the rgonanosheets.RGO doping led to destruction and reorganization of ZnO structure but nanoparticles ZnO still had ahexagonalwurtzite structure with a preferential orientation along(002)crystal plane at surface of rgo.And the square resistance of graphene doped AZO thin films has been improved significantly compare to pru AZO thin films(about from 55 k ohm/sq drop to 8 k ohm/sq).Preparation of graphene doped AZO thin films explore the feasible method for its application in the preparation of composite materials and the application of transparent conductive films.