Hydrogenated Wurtzite SiC Nanofilms: A Promising Novel Spin-Selective Semiconductor

来源 :2012年理论与高性能计算化学国际会议(ICT-HPCC12) | 被引量 : 0次 | 上传用户:mumu12312
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Based on first-principles calculations,we explore the possibility of designing novel SiC nanofilms via surface hydrogenation.The hydrogenated Wurtzite SiC nanofilms can be synthesized from semihydrogenated SiC bilayers under mild condition and exist stability at room temperature.It is also a novel ferromagnetic semiconductor,in which completely spin-polarized currents with reversible spin polarization can be simply created and controlled via electrical method.This 2D SiC based nanomaterial with the novel electronic properties will provide the possibility of applying for future high-performance spin-selective and nanoelectric devices.
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