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用改进的溶胶-凝胶法(sol-gel)制备了铈(Ce)钇(Y)共掺Ba0.6Sr0.4TiO3(BST)薄膜,研究了薄膜的结构和介电性能。扫描电镜(SEM)显示,共掺使薄膜致密、缩孔减少、晶粒大小均匀,随着共掺浓度的增加薄膜表面更平整光滑。原子力显微镜(AFM)表明,共掺薄膜表面致密、晶粒呈球状生长、晶界更明显,随共掺浓度的增加晶粒变小、表面粗糙度减小。V-C曲线表明,相对于铈或钇掺杂,共掺使薄膜的综合介电性能提高,2%Ce和2%Y共掺BST薄膜显示最佳的综合介电性能:零偏压下的电容为7.6×10-11F、介电损耗为0.0126,40V偏压下调谐率为41%,优质因子为32.5,可满足微波调谐器件的需要。
Ce (yttrium) co-doped Ba0.6Sr0.4TiO3 (BST) thin films were prepared by sol-gel method. The structure and dielectric properties of the thin films were investigated. Scanning electron microscopy (SEM) showed that the co-doped films made the films densified, the shrinkage decreased and the grain size was even. With the increase of co-doping concentration, the surface of the film was smoother and smoother. Atomic force microscopy (AFM) showed that the surface of the co-doped film is dense, the grains grow in a spherical shape, and the grain boundaries are more obvious. As the co-doped density increases, the grains become smaller and the surface roughness decreases. The VC curves show that the overall dielectric properties of the films are improved by co-doping compared to cerium or yttrium doping. The 2% Ce and 2% Y co-doped BST films exhibit the best overall dielectric properties: the capacitance at zero bias is 7.6 × 10-11F, dielectric loss of 0.0126, 40V bias voltage tuning rate of 41%, quality factor of 32.5, to meet the needs of microwave tuning devices.