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GeSi quantum nanostructures (QNs) have potential applications in optoelectronic devices due to their unique properties and compatibility with the sophisticated Si technology.However, owing to the indirect band gap and the type-Ⅱ band alignment of the GeSi QNs/Si, the disadvantages of poor quantum efficiency and broad spectra of the GeSi QNs on flat Si (001) substrates hinder their optoelectronic applications.One of the ways to enhance spontaneous emission is to fabricate nanocavities, where self-assembled GeSi QNs are embedded.However, the random spatial distribution of QNs leads to an inefficient coupling between the nanoocavity modes and the spontaneous emission.