SHG of the GeS2-Ga2S3-CdS chalcogenide amorphous film by electron beam irradiation

来源 :中国光学学会纤维光学与集成光学专业委员会全国第15次光纤通信暨第16届集成光学学术会议 | 被引量 : 0次 | 上传用户:lcqinyuyang
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  Chalcogenide glass is structural soft and always possesses high density of defects, as a result, is easy to be polarized.So it as a nonlinear optical material has become the focus of further development of all-optical communication.In this paper, Chalcogenide glass with the composition of 90GeS2-5Ga2S3-5CdS was prepared with conventional melt-quenching method.And then the GeS2-Ga2S3-CdS glassy film was deposited with PLD(pulsed laser deposition).As the structure of glass is optically isotropic on a spatial scale.In order to obtain second-order optical nonlinearity, the sample of glass must be polarized, leading to unevenly distribution of charges and break-up of the anisotropy in the film, consequently inducing generation of second-order nonlinearity.So in this paper, the film was polarized by electron beam irradiation and its optical second-order nonlinearity was measured by testing its Maker fringes.In addition, the mechanism of SHG was discussed according to Raman spectra and transmission spectra.SH of the sample was measured by testing its Maker fringes, and α-quartz with a thickness of 1.11 mm was used as a referencet crystal.We assume that ion beam irradiation does not cause significant changes in the structure of non-crystal films based on this.
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