2. 您的位置
3. 首页
4. 会议论文
5. Conductivity improvement of PbS colloidal quantum dot solids

Conductivity improvement of PbS colloidal quantum dot solids

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：longlong2ddd

【摘 要】

：

We synthesized uniform 6 nm sized spherical PbS quantum dots using lead chloride and elemental sulfur.Compared to other methods,this synthesis has certain advantages such as low cost and multigram sca

【作 者】

：

Seung Jin Heo Seokhyun Yoon Hyun Jae Kim 

【机 构】

：

School of Electrical and Electronic Engineering,Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

PbS colloidal quantum dots conductivity multigram scale thin-film transistors 

下载到本地 , 更方便阅读

下载此文 赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

We synthesized uniform 6 nm sized spherical PbS quantum dots using lead chloride and elemental sulfur.Compared to other methods,this synthesis has certain advantages such as low cost and multigram scale.

其他文献

高压直流供电系统在工程设计中的应用

高压直流供电系统从根本上解决了UPS系统存在的单点故障问题,使得整个供电系统的安全性和稳定性得到提高.本文将对目前240V高压直流供电系统与传统UPS供电系统进行对比分析,并对其主要技术指标和需要注意的问题进行探讨.

会议

通信电源直流供电系统结构设计技术分析

Vanguard网络备用路由探测研究

东北地区Vanguard传输网主用线路是租用电信2M线路,民航数据网提供的帧中继虚电路作为备份线路.但由于帧中继设备老化,网络所提供的带宽较低.无法时时保障备用线路正常.所以采用ATM网作为VG网络线路备份,以保障通信正常.

会议

通信网络路由选择资源配置协议分析

Heteroepitaxial growth of heavily Nb-doped SrTiO3 thin films prepared by ion beam deposition under c

Heavily Nb-doped SrTiO3 (STNO) heteroepitaxial films have been successfully grown on (001) LaAlO3 (LAO) single crystal substrate by ion beam deposition method with a microwave ion source.

会议

HeteroepitaxySrTiO3metal oxide thin filmion beam deposition

Plasma-enhanced Atomic Layer Deposition of Ruthenium-Aluminum Nitride Thin Films for Copper Diffusio

As semiconductor devices are scaled down,Cu interconnects become the best way due to its good electromigration resistance,and low electrical resistivity (1.67μΩ cm).

会议

Plasma enhanced atomic layer depositionCu diffusion barrierRuthenium-Aluminum

Comparative Study of Plasma-Enhanced Atomic Layer Deposition Ni by using Two Metallorganic Precursor

Nickel thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) by using metallorganic precursors and various reactant gases,H2 and NH3,including its plasma.

会议

Nickel filmatomic layer depositionplasmasilicide

Physical properties of epitaxial Zn1-xCuxO films fabricated by pulsed laser deposition

Cu-doped ZnO (CZO) thin films (0–3 mol％ Cu content) were grown on GaN/Al2O3 substrates at 700 ℃ by the pulsed laser deposition technique.

会议

PLD depositionEpitaxial growthZinc oxideMagnetism

Charge Traps in Graphene Field-Effect Transistors

We present an analysis of the ID-VG curve bending of graphene field-effect transistors (FETs) at the negative gate bias region.

会议

GrapheneField-effect transistorCharge TrappingHysteresis

Plasma Etching of SiO2 Using Modified Dielectric Barrier Discharge at Atmospheric Pressure

For the various electronic devices such as microelectromechanical system (MEMS) devices,thin film transistor-liquid crystal display (TFT-LCD) devices,flexible display devices,etc.,dielectric thin film

会议

Atmospheric pressureSiO2EtchingDielectric Barrier Discharge

New NBR Molding method making without bubbles

Recently,technology development has emerged for low-cost and high-performance multi-axis sensor using polymer.Especially,NBR is one of primary materials because it has high dielectric property.

会议

Polymer sensorDielectric ElastomerNBR Molding

Surface Alloying On Ti-Al Irradiated By High-Current Pulsed Electron Beam

Bulk Ti-Al alloys are extensively used in advanced aerospace engine and airframe components owing to their specific properties.

会议

Titanium-AluminiumSurface alloyingpulsed electron beam