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5. Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As films

Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As films

来源 :中国物理学会2012年秋季学术会议 | 被引量 : 0次 | 上传用户：meng010

【摘 要】

：

Ferromagnetic semiconductor (Ga,Mn)As has attracted great attention for both fundamental physics and potential applications since its discovery in 1990s[1].Most attractive properties of (Ga,Mn)As resu

【作 者】

：

Yanyong Li Huafeng Wang Yufei Cao Wengang Luo 

【机 构】

：

The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors,Chinese Ac

【出 处】

：

中国物理学会2012年秋季学术会议

【发表日期】

：

2012年9期

【关键词】

：

magnetic anisotropy planar Hall effect ultrathin (Ga Mn)As 

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论文部分内容阅读

Ferromagnetic semiconductor (Ga,Mn)As has attracted great attention for both fundamental physics and potential applications since its discovery in 1990s[1].Most attractive properties of (Ga,Mn)As result from the sensation of magnetic anisotropy,holding a great promise for the development of magnetic memory devices.

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